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  power module 1 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN4MM 600v igbt family features applications ? high short circuit capability ,self limiting short circuit current ? v ce(sat) with positive temperature coeffcient ? fast switc hing and short tail current ? free wheeling diodes with f ast and soft reverse recovery ? lo w switching losses symbol parameters test conditions values unit igbt v ces collector - emitter voltage t vj =25c 600 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 500 a t c =70c 400 a i cm repetitive peak collector current t p =1ms 800 a p tot power dissipation per igbt 1250 w diode v rrm repetitive reverse voltage t vj =25c 600 v i f(av) average forward current t c =25c 500 a t c =70c 400 a i frm repetitive peak forward current t p =1ms 800 a i 2 t t vj =125c, t=10ms, v r =0v 10000 a 2 s module characteristics (t c = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit t vj max) max. junction temperature 175 c t vj op operating temperature -40 150 c t stg storage temperature -40 125 c v isol insulation test voltage ac, t=1min 3000 v cti comparative tracking index module case exposed to 0.1% ammonium chloride solution per ul and iec standards 350 v torque module-to-sink recommended (m6) 3 5 nm torque module electrodes recommended (m6) 2.5 5 nm weight 320 g ? motor drives ? inverter ? converter ? smps and ups ? welder ? induction heating MG06400D-BN4MM series 400a dual igbt life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. absolute maximum ratings (t c = 25c, unless otherwise specifed) rohs agency agency file number e71639 agency approvals
power module 2 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN4MM 600v igbt family symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =6.4ma 4.9 5.8 6.5 v v ce(sat) collector - emitter saturation voltage i c =400a, v ge =15v, t vj =25c 1.45 v i c =400a, v ge =15v, t vj =125c 1. 6 v i ces collector leakage current v ce =600v, v ge =0v, t vj =25c 1. 0 ma v ce =600v, v ge =0v, t vj =125c 5 ma i ges gate leakage current v ce =0v,v ge =15v, t vj =125c -400 400 a r gint intergrated gate resistor 1. 0 q ge gate charge v ce =300v, i c =400a , v ge =15v 4.3 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 26 nf c res reverse transfer capacitance 0.76 nf t d(on) turn - on delay time v cc =30 0v i c =400a r g =1.5 v ge =15v inductive load t vj =25c 110 ns t vj =125c 120 ns t r rise time t vj =25c 50 ns t vj =125c 60 ns t d(off) turn - off delay time t vj =25c 490 ns t vj =125c 520 ns t f fall time t vj =25c 60 ns t vj =125c 70 ns e on turn - on energy t vj =25c 2.1 mj t vj =125c 3.2 mj e off turn - off energy t vj =25c 12 mj t vj =125c 15 mj i sc short circuit current t psc 6s , v ge =15v 2000 a t vj =125c,v cc =360v r thjc junction-to-case thermal resistance (per igbt) 0.12 k/w diode v f forward voltage i f =400a , v ge =0v, t vj =25c 1.55 v i f =400a , v ge =0v, t vj =125c 1.50 v i rrm max. reverse recovery current i f =400a , v r =300v 330 a q rr reverse recovery charge d if /dt=-7000a/s 29.0 c e rec reverse recovery energy t vj =125c 7. 4 mj r thjcd junction-to-case thermal resistance (per diode) 0.22 k/w electrical and thermal specifcations (t c = 25c, unless otherwise specifed)
power module 3 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN4MM 600v igbt family figure 1: t ypical output characteristics i c (a) v ce ?v? t vj =125c t vj =25c 800 640 480 320 160 0 0 0.4 0.8 1. 2 1.6 2.0 2.4 v ge =15v figure 2: t ypical output characteristics v ge ?v? 0 160 i c (a) 320 480 640 800 t vj =125c t vj =25c v ce =20v 11 9 01 5 6 7 8 figure 3: t ypical transfer characteristics 40 60 20 30 10 0 02 6 10 14 18 e on e of f (mj) e on e of f r g ? ? v cc =300 v i c =400 a v ge =15v t vj =125c 50 figure 4: switching energy vs. gate resistor 0 200 i c ?a? v cc =300v r g =1.5 v ge =15v t vj =125c 800 600 400 e of f e on 0 8 16 40 e on e of f (mj) 32 24 figure 5: s witching energy vs. collector current figure 6: rev erse biased safe operating area 0 200 400 600 800 100 0 01 00 200 3004 00 500 600 v ce ?v? 700 r g =1.5 v ge =15v t vj =125c i c (a) v ce ?v? 5. 2 0. 3 5. 3 0.4 5. 00 . 15 .1 0 i c (a) t vj =125c 2.04 .5 5.0 800 640 480 320 160 0
power module 4 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN4MM 600v igbt family figure 7: diode f orward characteristics v f ?v? 0.4 0 0.8 1.2 1.6 2.0 0 160 480 640 800 320 i f (a) t vj =25c t vj =125c e rec (mj) r g ? ? 0 24 6 8 6 4 2 0 8 10 12 10 12 i f =400 a v ce =300 v t vj =125c figure 8: s witching energy vs. gate resistort e rec (mj) 6 4 2 0 800 600 200 0 12 400 10 8 r g =1.5 v ce =300v t vj =125c figure 9: s witching energy vs. forward current rectangular pulse duration (seconds) z thjc (k/w) 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 diode igb t figure 10: t ransient thermal impedance
power module 5 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG06400D-BN4MM 600v igbt family packing options part number marking weight packing mode m.o.q MG06400D-BN4MM MG06400D-BN4MM 320g bulk pack 30 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type MG06400D-BN4MM voltage rating current rating assembly site 06: 600v 400: 400a d: package d b: 2x(igbt+fwd) dimensions-package d circuit diagram and pin assignment


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